H20R1203 H20R 1203 IGBT power transistor - 20A / 1200V - (Original)

H20R1203 IGBT power transistor

Specifications/Feature

• Brand/Make: Infineon Technologies (Original)
• Powerful monolithic body diode with low forward voltage designed for soft commutation only
  
• very tight parameter distribution
• high ruggedness,temperature stable behavior
• lowVCEsat
• easy parallel switching capability due to positive temperature coefficient in VCEsat
• LowEMI
• Qualified according to JEDEC for target applications
• Pb-free lead plating; ROHS complaint
• Collector-emitter voltage VCE: 1200 V
  
• DC collector current,limited by Tvjmax IC: 40A at 25°C and 20A at 100°C
  
• Gate-emitter voltage / Transient Gate-emitter voltage, ) VGE :±20 to ±25volt
  
• VCEsat :1.48V at 25°C
  
• Tvjmax :175°C

Applications:

• Inductive cooking
  
• Inverterized microwave ovens
  
• Resonant converters
  
• Softs witching applications
  
• Electronics Projects
  

* Image shown is a representation only.