IRF640N Power MOSFET TO-220 Package 200V 18A N Channel (Original)

IRF640N MOSFET - N-Channel Transistor(Hexfet Power Mosfet)

This high-performance, N-channel MOSFET is designed for applications demanding high voltage and current capabilities. With a maximum voltage rating of 200V and current handling up to 18A, the IRF640N is ideal for a wide range of power management, switching, and amplification applications. Its durable TO-220 package ensures reliable thermal performance and ease of mounting.

Key Features:

• High Voltage and Current Rating: Supports up to 200V and 18A, making it suitable for high-power applications.
• N-Channel Design: Offers fast switching speeds and low on-resistance for efficient operation.
• TO-220 Package: Ensures excellent heat dissipation and simple PCB integration.
• Low Gate Drive Requirements: Optimized for efficient operation with standard logic-level circuits.
• Enhanced Durability: Robust build for reliable performance in demanding environments.

Specifications:

• Model: IRF640N
• Type: N-Channel Power MOSFET
• Maximum Voltage (Vds): 200V
• Maximum Current (Id): 18A
• On-Resistance (Rds(on)): < 0.18 Ohms (at Vgs = 10V)
• Gate Threshold Voltage (Vgs(th)): 2-4V
• Power Dissipation: 125W
• Package Type: TO-220
• Operating Temperature Range: -55°C to +175°C
• Brand/Make: International Rectifier

Applications:

• Motor control and drive circuits.
• DC-DC converters and power supplies.
• Inverters for solar and renewable energy systems.
• High-speed switching applications.
• Audio amplifiers and other electronic circuits requiring efficient power management.