MJE13003 1.5 A 400 V NPN Bipolar Silicon Power Transistor 13003 / 3dd13003 (TO-126/TO-225)

MJE13003 1.5 A 400 V NPN Bipolar Silicon Power Transistor 13003 / 3dd13003 (TO-126/TO-225)

The MJE13003 is a high-voltage NPN Bipolar Junction Transistor (BJT) designed for power switching applications. With a collector current of 1.5A and a collector-emitter voltage of 400V, it is widely used in switching power supplies, electronic ballasts, and motor control circuits. Its TO-126 package provides efficient heat dissipation, ensuring reliable performance in high-power applications.

Key Features & Benefits

• High Voltage & Current Rating: Supports 400V collector-emitter voltage and 1.5A continuous current.
• Efficient Switching Performance: Low switching loss for energy-efficient operation.
• TO-126 Package: Compact design with good thermal dissipation.
• High-Speed Switching: Ideal for power converters and switching regulators.
• Durable & Reliable: Built for high-voltage and high-power applications.

Specifications

• Transistor Type: NPN Bipolar Junction Transistor (BJT)
• Collector-Emitter Voltage (Vce): 400V
• Collector Current (Ic): 1.5A
• Power Dissipation (Pd): 20W
• DC Current Gain (hFE): 8 – 40 @ Ic = 0.5A, Vce = 5V
• Saturation Voltage (Vce(sat)): ≤ 1V @ Ic = 1A
• Package Type: TO-126
• Operating Temperature: -65°C to 150°C

Applications

• Switching power supplies
• LED driver circuits
• Electronic ballasts
• Motor control and industrial automation
• High-voltage power switching applications

* Image shown is a representation only.