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2N60 - 600V 2A N-Channel Enhancement Mode Power MOSFET - TO-251
- Product Code: MM_2N60_Smd
- Availability: In Stock
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₹22.00 (+ GST)
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- 25 or more quantity/sets : ₹19.00
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2N60 - 600V 2A N-Channel Enhancement Mode Power MOSFET - TO-251
The 2N60 is a 600V, 2A N-Channel Enhancement Mode Power MOSFET housed in a TO-251 package. This high-voltage MOSFET is designed for efficient switching applications, offering features such as low on-state resistance and fast switching capabilities.
Key Features & Benefits
- High Voltage Capability: Withstands drain-source voltages up to 600V, suitable for high-voltage applications.
- Low On-State Resistance (R<sub>DS(on)</sub>): Ensures minimal conduction losses, enhancing overall efficiency.
- Fast Switching Speed: Optimized for rapid switching applications, reducing transition losses.
- Robust Design: Engineered to handle high energy in avalanche and commutation modes.
Specifications
- Drain-Source Voltage (V<sub>DSS</sub>): 600V
- Continuous Drain Current (I<sub>D</sub>): 2A
- Pulsed Drain Current (I<sub>DM</sub>): 8A
- Gate-Source Voltage (V<sub>GSS</sub>): ±30V
- On-State Resistance (R<sub>DS(on)</sub>): 4.4Ω at V<sub>GS</sub> = 10V, I<sub>D</sub> = 1A
- Total Gate Charge (Q<sub>g</sub>): 9.0nC (typical)
- Package Type: TO-251 (also known as IPAK)
Applications
- Switching Power Supplies: Efficiently manages power conversion in SMPS designs.
- Motor Control: Ideal for driving motors in various industrial applications.
- Lighting Systems: Used in ballast and LED driver circuits for efficient lighting solutions.
- Battery Chargers: Ensures reliable operation in charging circuits for various battery types.
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