2N7000 N-Channel Enhancement FET

The 2N7000 is a low-power, N-Channel Enhancement Mode MOSFET designed for switching and amplification applications. With a drain-source voltage (Vds) of 60V and a continuous drain current of 200mA, this MOSFET is ideal for low-power switching circuits, signal processing, and general-purpose applications. It features fast switching speeds, low gate drive requirements, and high input impedance, making it a versatile and efficient component for digital and analog circuits.

Key Features & Benefits

• Low On-Resistance (Rds(on)) – Ensures efficient switching with minimal power loss.
• Fast Switching Speed – Suitable for high-frequency applications.
• Low Gate Drive Requirement – Operates efficiently with logic-level control signals.
• High Input Impedance – Reduces loading on the driving circuit.
• Compact TO-92 Package – Ideal for space-constrained designs.

Specifications

• Transistor Type: N-Channel MOSFET
• Drain-Source Voltage (Vds): 60V
• Continuous Drain Current (Id): 200mA
• Gate-Source Voltage (Vgs): ±20V
• On-Resistance (Rds(on)): ≤ 5Ω @ Vgs = 10V
• Total Gate Charge (Qg): 2nC (Typical)
• Threshold Voltage (Vgs(th)): 0.8V to 3V
• Switching Speed: Fast, suitable for high-speed applications
• Package Type: TO-92 (Through-Hole)

Applications

• Signal Switching & Amplification – Ideal for low-power signal processing circuits.
• Relay & LED Drivers – Efficiently controls low to medium power loads.
• Logic Level Switching – Works with microcontrollers (Arduino, Raspberry Pi, etc.).
• Power Management Circuits – Used in low-voltage DC-DC converters.
• Battery-Powered Devices – Helps minimize power consumption in portable applications.